Intern onderdeelnummer | RO-SQJ850EP-T1_GE3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2.5V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PowerPAK® SO-8 |
Serie: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, VGS: | 23 mOhm @ 10.3A, 10V |
Vermogensverlies (Max): | 45W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | PowerPAK® SO-8 |
Andere namen: | SQJ850EP-T1-GE3 SQJ850EP-T1-GE3-ND SQJ850EP-T1_GE3TR |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 1225pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 60V |
gedetailleerde beschrijving: | N-Channel 60V 24A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25 ° C: | 24A (Tc) |
Email: | [email protected] |