Intern onderdeelnummer | RO-SPP18P06PHXKSA1 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO-220-3 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, VGS: | 130 mOhm @ 13.2A, 10V |
Vermogensverlies (Max): | 81.1W (Ta) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 |
Andere namen: | SP000446906 SPP18P06P G SPP18P06P G-ND SPP18P06P H SPP18P06P H-ND SPP18P06PH |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 60V |
gedetailleerde beschrijving: | P-Channel 60V 18.7A (Ta) 81.1W (Ta) Through Hole PG-TO-220-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 18.7A (Ta) |
Email: | [email protected] |