NTMD6601NR2G
Onderdeel nummer:
NTMD6601NR2G
Fabrikant:
ON Semiconductor
Beschrijving:
MOSFET 2N-CH 80V 1.1A 8SOIC
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
88824 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
NTMD6601NR2G.pdf

Invoering

We can supply NTMD6601NR2G, use the request quote form to request NTMD6601NR2G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NTMD6601NR2G.The price and lead time for NTMD6601NR2G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NTMD6601NR2G.We look forward to working with you to establish long-term relations of cooperation

bestek

Intern onderdeelnummer RO-NTMD6601NR2G
Staat Original New
Land van oorsprong Contact us
Top Markering email us
Vervanging See datasheet
VGS (th) (Max) @ Id:3V @ 250µA
Leverancier Device Pakket:8-SOIC
Serie:-
Rds On (Max) @ Id, VGS:215 mOhm @ 2.2A, 10V
Vermogen - Max:600mW
Packaging:Tape & Reel (TR)
Verpakking / doos:8-SOIC (0.154", 3.90mm Width)
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain naar de Bron Voltage (Vdss):80V
gedetailleerde beschrijving:Mosfet Array 2 N-Channel (Dual) 80V 1.1A 600mW Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25 ° C:1.1A
Email:[email protected]

Quick Request Quote

Onderdeel nummer
Aantal stuks
Bedrijf
E-mail
Telefoon
Comments