Intern onderdeelnummer | RO-IRLML6302TR |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 1.5V @ 250µA |
Vgs (Max): | ±12V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | Micro3™/SOT-23 |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 600 mOhm @ 610mA, 4.5V |
Vermogensverlies (Max): | 540mW (Ta) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | TO-236-3, SC-59, SOT-23-3 |
Andere namen: | *IRLML6302TR IRLML6302 IRLML6302-ND IRLML6302CT |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Contains lead / RoHS non-compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 97pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 3.6nC @ 4.45V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 2.7V, 4.5V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 |
Current - Continuous Drain (Id) @ 25 ° C: | 780mA (Ta) |
Email: | [email protected] |