Intern onderdeelnummer | RO-IRF7779L2TR1PBF |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 5V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DIRECTFET L8 |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 11 mOhm @ 40A, 10V |
Vermogensverlies (Max): | 3.3W (Ta), 125W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | DirectFET™ Isometric L8 |
Andere namen: | IRF7779L2TR1PBFTR SP001575282 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 6660pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 150V |
gedetailleerde beschrijving: | N-Channel 150V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DIRECTFET L8 |
Current - Continuous Drain (Id) @ 25 ° C: | 375A (Tc) |
Email: | [email protected] |