Intern onderdeelnummer | RO-IRF6613TR1PBF |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2.25V @ 250µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | DIRECTFET™ MT |
Serie: | HEXFET® |
Rds On (Max) @ Id, VGS: | 3.4 mOhm @ 23A, 10V |
Vermogensverlies (Max): | 2.8W (Ta), 89W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | DirectFET™ Isometric MT |
Andere namen: | IRF6613TR1PBFTR SP001528336 |
Temperatuur: | -40°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 5950pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 4.5V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 40V |
gedetailleerde beschrijving: | N-Channel 40V 23A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT |
Current - Continuous Drain (Id) @ 25 ° C: | 23A (Ta), 150A (Tc) |
Email: | [email protected] |