Intern onderdeelnummer | RO-IPP052NE7N3GXKSA1 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 3.8V @ 91µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO220-3-1 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, VGS: | 5.2 mOhm @ 80A, 10V |
Vermogensverlies (Max): | 150W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-220-3 |
Andere namen: | IPP052NE7N3 G IPP052NE7N3 G-ND IPP052NE7N3G SP000641726 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 37.5V |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 75V |
gedetailleerde beschrijving: | N-Channel 75V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3-1 |
Current - Continuous Drain (Id) @ 25 ° C: | 80A (Tc) |
Email: | [email protected] |