Intern onderdeelnummer | RO-IPB60R099C7ATMA1 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 4V @ 490µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO263-3 |
Serie: | CoolMOS™ C7 |
Rds On (Max) @ Id, VGS: | 99 mOhm @ 9.7A, 10V |
Vermogensverlies (Max): | 110W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Andere namen: | IPB60R099C7ATMA1-ND IPB60R099C7ATMA1TR SP001297998 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 1819pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 650V |
gedetailleerde beschrijving: | N-Channel 650V 22A (Tc) 110W (Tc) Surface Mount PG-TO263-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 22A (Tc) |
Email: | [email protected] |