Intern onderdeelnummer | RO-FDA16N50-F109 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 5V @ 250µA |
Vgs (Max): | ±30V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | TO-3PN |
Serie: | UniFET™ |
Rds On (Max) @ Id, VGS: | 380 mOhm @ 8.3A, 10V |
Vermogensverlies (Max): | 205W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-3P-3, SC-65-3 |
Andere namen: | FDA16N50_F109 FDA16N50_F109-ND |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 1945pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 10V |
Drain naar de Bron Voltage (Vdss): | 500V |
gedetailleerde beschrijving: | N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN |
Current - Continuous Drain (Id) @ 25 ° C: | 16.5A (Tc) |
Email: | [email protected] |