Intern onderdeelnummer | RO-BSS192PL6327HTSA1 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 2V @ 130µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-SOT89 |
Serie: | SIPMOS® |
Rds On (Max) @ Id, VGS: | 12 Ohm @ 190mA, 10V |
Vermogensverlies (Max): | 1W (Ta) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | TO-243AA |
Andere namen: | BSS192PL6327 BSS192PL6327HTSA1CT BSS192PL6327INCT BSS192PL6327INCT-ND |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 104pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 10V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 2.8V, 10V |
Drain naar de Bron Voltage (Vdss): | 250V |
gedetailleerde beschrijving: | P-Channel 250V 190mA (Ta) 1W (Ta) Surface Mount PG-SOT89 |
Current - Continuous Drain (Id) @ 25 ° C: | 190mA (Ta) |
Email: | [email protected] |