ST Power MDMESH K6 New Series Super Crystal Tube Improves Multiple Key Parameters, minimizes system power loss, especially suitable for lighting applications based on flyback topologies, such as LED drivers, HID lights, or applications for power adapters and table panel displays power supply.

STAP 800V STPOWER MDMESH K6 series, a benchmark for this supercoder technology established high performance and ease of use. The RDS (ON) X area parameters of MDMESH K6 are in the leading level in the market, which can achieve compact set high power density and market-leading new design.

In addition, the threshold pressure of the K6 series is lower than the previous generation of MDMESH K5, and lower voltage drivers can be used to reduce power consumption and improve energy efficiency, mainly for zero-power standby applications. The total gate charge (QG) is also very low, high switching speed and low loss can be achieved.

An ESD protection diode is integrated on the chip, and the overall robustness of MOSFET is increased to the body model (HBM) level 2.

The Chief Technology Officer of Italian Solid Lighting Innovation Enterprise TCI (www.tcisaronno.net) said Luca Colombo, R & D, said: "We have evaluated the new super high voltage MDMESH K6 series of samples, and note its excellent RDSON * area And the total gate charge (QG) performance characteristics, give us a deep impression. "

STP80N240K6 (RDS (ON) MAX = 0.22 ?, qgtyp = 25.9NC) is used in TO-220 through hole package is the first mass production MDMesh K6 MOSFET, and a free sample is now available. The DPAK and TO-220FP versions will be mass production before January 2022. Order 1000 pieces, from $ 1.013 in a single price.

STMicroe will launch a complete product combination of MDMesh K6 2022 to expand the on-resistance RDS (ON) range from 0.22Ω to 4.5Ω, and add a range of package options, including SMD and through holes.