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TRS10E65C,S1Q
- Part Number:
- TRS10E65C,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- DIODE SCHOTTKY 650V 10A TO220-2L
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 58927 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- TRS10E65C,S1Q.pdf
Introduction
Specifications
| Internal Part Number | RO-TRS10E65C,S1Q |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 10A |
| Voltage - DC Reverse (Vr) (Max): | 650V |
| Supplier Device Package: | TO-220-2L |
| Speed: | No Recovery Time > 500mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 0ns |
| Packaging: | Tube |
| Package / Case: | TO-220-2 |
| Other Names: | TRS10E65C,S1Q(S TRS10E65C,S1Q-ND TRS10E65CS1Q |
| Operating Temperature - Junction: | 175°C (Max) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Diode Type: | Silicon Carbide Schottky |
| Detailed Description: | Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220-2L |
| Current - Reverse Leakage @ Vr: | 90µA @ 650V |
| Current - Average Rectified (Io): | 10A (DC) |
| Capacitance @ Vr, F: | - |
| Email: | [email protected] |
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