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TK9A90E,S4X
- Part Number:
- TK9A90E,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- MOSFET N-CH 900V TO220SIS
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 61885 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- TK9A90E,S4X.pdf
Introduction
Specifications
| Internal Part Number | RO-TK9A90E,S4X |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 4V @ 900µA |
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220SIS |
| Series: | π-MOSVIII |
| Rds On (Max) @ Id, Vgs: | 1.3 Ohm @ 4.5A, 10V |
| Power Dissipation (Max): | 50W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 Full Pack |
| Other Names: | TK9A90E,S4X(S TK9A90ES4X |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 900V |
| Detailed Description: | N-Channel 900V 9A (Ta) 50W (Tc) Through Hole TO-220SIS |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
| Email: | [email protected] |
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