TC58BYG0S3HBAI6
TC58BYG0S3HBAI6
Part Number:
TC58BYG0S3HBAI6
Manufacturer:
Toshiba Memory America, Inc.
Description:
IC FLASH 1G PARALLEL 67VFBGA
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
43983 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
TC58BYG0S3HBAI6.pdf

Introduction

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Specifications

Internal Part Number RO-TC58BYG0S3HBAI6
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Write Cycle Time - Word, Page:25ns
Voltage - Supply:1.7 V ~ 1.95 V
Technology:FLASH - NAND (SLC)
Supplier Device Package:67-VFBGA (6.5x8)
Series:Benand™
Packaging:Tray
Package / Case:67-VFBGA
Other Names:TC58BYG0S3HBAI6JDH
TC58BYG0S3HBAI6YCJ
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
Memory Type:Non-Volatile
Memory Size:1Gb (128M x 8)
Memory Interface:Parallel
Memory Format:FLASH
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FLASH - NAND (SLC) Memory IC 1Gb (128M x 8) Parallel 25ns 67-VFBGA (6.5x8)
Access Time:25ns
Email:[email protected]

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