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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > SSVMUN5312DW1T2G
SSVMUN5312DW1T2G
SSVMUN5312DW1T2G
Part Number:
SSVMUN5312DW1T2G
Manufacturer:
ON Semiconductor
Description:
TRANS BRT DUAL 100MA 50V SOT363
RoHS Status:
Lead free / RoHS Compliant
Quantity in Stock:
75923 Pieces
Delivery Time:
1-2 days (We have stocks to ship now)
Production time:
4-8 weeks
Data sheet:
SSVMUN5312DW1T2G.pdf
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Introduction

ROGER-TECH is the stocking distributor for SSVMUN5312DW1T2G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SSVMUN5312DW1T2G by email, we will give you a best price according your plan.
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Specifications

Internal Part Number RO-SSVMUN5312DW1T2G
Condition Original New
Country Origin Contact us
Top Marking email us
Replacement See datasheet
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package:SC-88/SC70-6/SOT-363
Series:-
Resistor - Emitter Base (R2):22 kOhms
Resistor - Base (R1):22 kOhms
Power - Max:187mW
Packaging:Tape & Reel (TR)
Package / Case:6-TSSOP, SC-88, SOT-363
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:40 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Frequency - Transition:-
Detailed Description:Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Current - Collector Cutoff (Max):500nA
Current - Collector (Ic) (Max):100mA
Base Part Number:MUN53**DW1
Email:[email protected]

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