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SI1922EDH-T1-GE3
- Part Number:
- SI1922EDH-T1-GE3
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET 2N-CH 20V 1.3A SOT-363
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 60718 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- SI1922EDH-T1-GE3.pdf
Introduction
Specifications
| Internal Part Number | RO-SI1922EDH-T1-GE3 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Supplier Device Package: | SC-70-6 (SOT-363) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 198 mOhm @ 1A, 4.5V |
| Power - Max: | 1.25W |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Other Names: | SI1922EDH-T1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 8V |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Detailed Description: | Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363) |
| Current - Continuous Drain (Id) @ 25°C: | 1.3A |
| Base Part Number: | SI1922 |
| Email: | [email protected] |
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