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RN1964TE85LF
- Part Number:
- RN1964TE85LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Description:
- TRANS 2NPN PREBIAS 0.2W US6
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 53624 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- RN1964TE85LF.pdf
Introduction
Specifications
| Internal Part Number | RO-RN1964TE85LF |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Transistor Type: | 2 NPN - Pre-Biased (Dual) |
| Supplier Device Package: | US6 |
| Series: | - |
| Resistor - Emitter Base (R2): | 47 kOhms |
| Resistor - Base (R1): | 47 kOhms |
| Power - Max: | 200mW |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Other Names: | RN1964TE85LFCT |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Frequency - Transition: | 250MHz |
| Detailed Description: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Current - Collector (Ic) (Max): | 100mA |
| Email: | [email protected] |
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