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RJP020N06T100
- Part Number:
- RJP020N06T100
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 60V 2A SOT-89
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 40123 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- 1.RJP020N06T100.pdf2.RJP020N06T100.pdf
Introduction
Specifications
| Internal Part Number | RO-RJP020N06T100 |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
| Vgs (Max): | ±12V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | MPT3 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 240 mOhm @ 2A, 4.5V |
| Power Dissipation (Max): | 500mW (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-243AA |
| Other Names: | RJP020N06T100TR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 160pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3 |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Email: | [email protected] |
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