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NTD4960N-1G
- Part Number:
- NTD4960N-1G
- Manufacturer:
- ON Semiconductor
- Description:
- MOSFET N-CH 30V 11.1A IPAK
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 54970 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- NTD4960N-1G.pdf
Introduction
Specifications
| Internal Part Number | RO-NTD4960N-1G |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | I-PAK |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 30A, 10V |
| Power Dissipation (Max): | 1.07W (Ta), 35.71W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Other Names: | NTD4960N-1GOS |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Detailed Description: | N-Channel 30V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Through Hole I-PAK |
| Current - Continuous Drain (Id) @ 25°C: | 8.9A (Ta), 55A (Tc) |
| Email: | [email protected] |
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