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JAN1N5553US
- Part Number:
- JAN1N5553US
- Manufacturer:
- Microsemi
- Description:
- DIODE GEN PURP 800V 3A B-MELF
- RoHS Status:
- Contains lead / RoHS non-compliant
- Quantity in Stock:
- 47670 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- JAN1N5553US.pdf
Introduction
Specifications
| Internal Part Number | RO-JAN1N5553US |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 9A |
| Voltage - DC Reverse (Vr) (Max): | 800V |
| Supplier Device Package: | D-5B |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Series: | Military, MIL-PRF-19500/420 |
| Reverse Recovery Time (trr): | 2µs |
| Packaging: | Bulk |
| Package / Case: | SQ-MELF, B |
| Other Names: | 1086-19416 1086-19416-MIL |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 8 Weeks |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Diode Type: | Standard |
| Detailed Description: | Diode Standard 800V 3A Surface Mount D-5B |
| Current - Reverse Leakage @ Vr: | 1µA @ 800V |
| Current - Average Rectified (Io): | 3A |
| Capacitance @ Vr, F: | - |
| Email: | [email protected] |
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