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2SJ649-AZ
- Part Number:
- 2SJ649-AZ
- Manufacturer:
- Renesas Electronics America
- Description:
- MOSFET P-CH 60V 20A TO-220
- RoHS Status:
- Lead free / RoHS Compliant
- Quantity in Stock:
- 87283 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- 2SJ649-AZ.pdf
Introduction
Specifications
| Internal Part Number | RO-2SJ649-AZ |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Vgs(th) (Max) @ Id: | - |
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220 Isolated Tab |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 48 mOhm @ 10A, 10V |
| Power Dissipation (Max): | 2W (Ta), 25W (Tc) |
| Packaging: | Bulk |
| Package / Case: | TO-220-3 Isolated Tab |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Drain to Source Voltage (Vdss): | 60V |
| Detailed Description: | P-Channel 60V 20A (Tc) 2W (Ta), 25W (Tc) Through Hole TO-220 Isolated Tab |
| Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
| Email: | [email protected] |
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