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1N8031-GA
- Part Number:
- 1N8031-GA
- Manufacturer:
- GeneSiC Semiconductor
- Description:
- DIODE SCHOTTKY 650V 1A TO276
- RoHS Status:
- Contains lead / RoHS non-compliant
- Quantity in Stock:
- 54866 Pieces
- Delivery Time:
- 1-2 days (We have stocks to ship now)
- Production time:
- 4-8 weeks
- Data sheet:
- 1N8031-GA.pdf
Introduction
Specifications
| Internal Part Number | RO-1N8031-GA |
|---|---|
| Condition | Original New |
| Country Origin | Contact us |
| Top Marking | email us |
| Replacement | See datasheet |
| Voltage - Peak Reverse (Max): | Silicon Carbide Schottky |
| Voltage - Forward (Vf) (Max) @ If: | 1A |
| Voltage - Breakdown: | TO-276 |
| Series: | - |
| RoHS Status: | Tube |
| Reverse Recovery Time (trr): | No Recovery Time > 500mA (Io) |
| Resistance @ If, F: | 76pF @ 1V, 1MHz |
| Polarization: | TO-276AA |
| Other Names: | 1242-1118 1N8031GA |
| Operating Temperature - Junction: | 0ns |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 18 Weeks |
| Manufacturer Part Number: | 1N8031-GA |
| Expanded Description: | Diode Silicon Carbide Schottky 650V 1A Through Hole TO-276 |
| Diode Configuration: | 5µA @ 650V |
| Description: | DIODE SCHOTTKY 650V 1A TO276 |
| Current - Reverse Leakage @ Vr: | 1.5V @ 1A |
| Current - Average Rectified (Io) (per Diode): | 650V |
| Capacitance @ Vr, F: | -55°C ~ 250°C |
| Email: | [email protected] |
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