SPB80N10L G
- Modello di prodotti:
- SPB80N10L G
- fabbricante:
- International Rectifier (Infineon Technologies)
- Descrizione:
- MOSFET N-CH 100V 80A TO-263
- Stato RoHS:
- Senza piombo / RoHS conforme
- Quantità in magazzino:
- 51965 Pieces
- Tempo di consegna:
- 1-2 days (We have stocks to ship now)
- Tempi di produzione:
- 4-8 weeks
- Scheda dati:
- SPB80N10L G.pdf
introduzione
We can supply SPB80N10L G, use the request quote form to request SPB80N10L G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SPB80N10L G.The price and lead time for SPB80N10L G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SPB80N10L G.We look forward to working with you to establish long-term relations of cooperation
Specifiche
| Numero di parte interno | RO-SPB80N10L G |
|---|---|
| Condizione | Original New |
| Paese di origine | Contact us |
| Contrassegno superiore | email us |
| Sostituzione | See datasheet |
| Vgs (th) (max) a Id: | 2V @ 2mA |
| Vgs (Max): | ±20V |
| Tecnologia: | MOSFET (Metal Oxide) |
| Contenitore dispositivo fornitore: | PG-TO263-3-2 |
| Serie: | SIPMOS® |
| Rds On (max) a Id, Vgs: | 14 mOhm @ 58A, 10V |
| Dissipazione di potenza (max): | 250W (Tc) |
| imballaggio: | Tape & Reel (TR) |
| Contenitore / involucro: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Altri nomi: | SP000102173 SPB80N10L G-ND SPB80N10LGINTR SPB80N10LGXT |
| temperatura di esercizio: | -55°C ~ 175°C (TJ) |
| Tipo montaggio: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Stato senza piombo / Stato RoHS: | Lead free / RoHS Compliant |
| Capacità di ingresso (Ciss) (Max) @ Vds: | 4540pF @ 25V |
| Carica Gate (Qg) (Max) @ Vgs: | 240nC @ 10V |
| Tipo FET: | N-Channel |
| Caratteristica FET: | - |
| Tensione dell'azionamento (Max Rds On, Min Rds On): | 4.5V, 10V |
| Tensione drain-source (Vdss): | 100V |
| Descrizione dettagliata: | N-Channel 100V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2 |
| Corrente - Drain continuo (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
