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Casa > Centro di prodotti > Prodotti a semiconduttore discreti > Transistor-FET, MOSFET-singolo > IXTU06N120P
IXTU06N120P
IXTU06N120P
Modello di prodotti:
IXTU06N120P
fabbricante:
IXYS Corporation
Descrizione:
MOSFET N-CH 1200V 0.6A TO-251
Stato RoHS:
Senza piombo / RoHS conforme
Quantità in magazzino:
33046 Pieces
Tempo di consegna:
1-2 days (We have stocks to ship now)
Tempi di produzione:
4-8 weeks
Scheda dati:
IXTU06N120P.pdf
Inchiesta

introduzione

We can supply IXTU06N120P, use the request quote form to request IXTU06N120P pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTU06N120P.The price and lead time for IXTU06N120P depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTU06N120P.We look forward to working with you to establish long-term relations of cooperation

Specifiche

Numero di parte interno RO-IXTU06N120P
Condizione Original New
Paese di origine Contact us
Contrassegno superiore email us
Sostituzione See datasheet
Vgs (th) (max) a Id:-
Tecnologia:MOSFET (Metal Oxide)
Contenitore dispositivo fornitore:TO-251
Serie:-
Rds On (max) a Id, Vgs:-
Dissipazione di potenza (max):-
imballaggio:Tube
Contenitore / involucro:TO-251-3 Short Leads, IPak, TO-251AA
temperatura di esercizio:-
Tipo montaggio:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Stato senza piombo / Stato RoHS:Lead free / RoHS Compliant
Tipo FET:N-Channel
Caratteristica FET:-
Tensione drain-source (Vdss):1200V
Descrizione dettagliata:N-Channel 1200V 600mA (Tc) Through Hole TO-251
Corrente - Drain continuo (Id) @ 25 ° C:600mA (Tc)
Email:[email protected]

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