IRF6610TR1
- Modello di prodotti:
- IRF6610TR1
- fabbricante:
- International Rectifier (Infineon Technologies)
- Descrizione:
- MOSFET N-CH 20V 15A DIRECTFET
- Stato RoHS:
- Contiene piombo / RoHS non conforme
- Quantità in magazzino:
- 78979 Pieces
- Tempo di consegna:
- 1-2 days (We have stocks to ship now)
- Tempi di produzione:
- 4-8 weeks
- Scheda dati:
- IRF6610TR1.pdf
introduzione
We can supply IRF6610TR1, use the request quote form to request IRF6610TR1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF6610TR1.The price and lead time for IRF6610TR1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRF6610TR1.We look forward to working with you to establish long-term relations of cooperation
Specifiche
| Numero di parte interno | RO-IRF6610TR1 |
|---|---|
| Condizione | Original New |
| Paese di origine | Contact us |
| Contrassegno superiore | email us |
| Sostituzione | See datasheet |
| Vgs (th) (max) a Id: | 2.55V @ 250µA |
| Vgs (Max): | ±20V |
| Tecnologia: | MOSFET (Metal Oxide) |
| Contenitore dispositivo fornitore: | DIRECTFET™ SQ |
| Serie: | HEXFET® |
| Rds On (max) a Id, Vgs: | 6.8 mOhm @ 15A, 10V |
| Dissipazione di potenza (max): | 2.2W (Ta), 42W (Tc) |
| imballaggio: | Tape & Reel (TR) |
| Contenitore / involucro: | DirectFET™ Isometric SQ |
| Altri nomi: | IRF6610 IRF6610-ND IRF6610TR1-ND IRF6610TR1TR SP001526776 |
| temperatura di esercizio: | -40°C ~ 150°C (TJ) |
| Tipo montaggio: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Stato senza piombo / Stato RoHS: | Contains lead / RoHS non-compliant |
| Capacità di ingresso (Ciss) (Max) @ Vds: | 1520pF @ 10V |
| Carica Gate (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| Tipo FET: | N-Channel |
| Caratteristica FET: | - |
| Tensione dell'azionamento (Max Rds On, Min Rds On): | 4.5V, 10V |
| Tensione drain-source (Vdss): | 20V |
| Descrizione dettagliata: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
| Corrente - Drain continuo (Id) @ 25 ° C: | 15A (Ta), 66A (Tc) |
| Email: | [email protected] |
