Nomor Bagian Internal | RO-IRF6610TR1 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 2.55V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | DIRECTFET™ SQ |
Seri: | HEXFET® |
Rds Pada (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
Power Disipasi (Max): | 2.2W (Ta), 42W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | DirectFET™ Isometric SQ |
Nama lain: | IRF6610 IRF6610-ND IRF6610TR1-ND IRF6610TR1TR SP001526776 |
Suhu Operasional: | -40°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1520pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 4.5V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 20V |
Detil Deskripsi: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
Current - Continuous Drain (Id) @ 25 ° C: | 15A (Ta), 66A (Tc) |
Email: | [email protected] |