BSZ12DN20NS3GATMA1
- Modello di prodotti:
- BSZ12DN20NS3GATMA1
- fabbricante:
- International Rectifier (Infineon Technologies)
- Descrizione:
- MOSFET N-CH 200V 11.3A 8TSDSON
- Stato RoHS:
- Senza piombo / RoHS conforme
- Quantità in magazzino:
- 49122 Pieces
- Tempo di consegna:
- 1-2 days (We have stocks to ship now)
- Tempi di produzione:
- 4-8 weeks
- Scheda dati:
- BSZ12DN20NS3GATMA1.pdf
introduzione
We can supply BSZ12DN20NS3GATMA1, use the request quote form to request BSZ12DN20NS3GATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number BSZ12DN20NS3GATMA1.The price and lead time for BSZ12DN20NS3GATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# BSZ12DN20NS3GATMA1.We look forward to working with you to establish long-term relations of cooperation
Specifiche
| Numero di parte interno | RO-BSZ12DN20NS3GATMA1 |
|---|---|
| Condizione | Original New |
| Paese di origine | Contact us |
| Contrassegno superiore | email us |
| Sostituzione | See datasheet |
| Vgs (th) (max) a Id: | 4V @ 25µA |
| Vgs (Max): | ±20V |
| Tecnologia: | MOSFET (Metal Oxide) |
| Contenitore dispositivo fornitore: | PG-TSDSON-8 |
| Serie: | OptiMOS™ |
| Rds On (max) a Id, Vgs: | 125 mOhm @ 5.7A, 10V |
| Dissipazione di potenza (max): | 50W (Tc) |
| imballaggio: | Cut Tape (CT) |
| Contenitore / involucro: | 8-PowerTDFN |
| Altri nomi: | BSZ12DN20NS3GATMA1CT BSZ12DN20NS3GCT BSZ12DN20NS3GCT-ND |
| temperatura di esercizio: | -55°C ~ 150°C (TJ) |
| Tipo montaggio: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Stato senza piombo / Stato RoHS: | Lead free / RoHS Compliant |
| Capacità di ingresso (Ciss) (Max) @ Vds: | 680pF @ 100V |
| Carica Gate (Qg) (Max) @ Vgs: | 8.7nC @ 10V |
| Tipo FET: | N-Channel |
| Caratteristica FET: | - |
| Tensione dell'azionamento (Max Rds On, Min Rds On): | 10V |
| Tensione drain-source (Vdss): | 200V |
| Descrizione dettagliata: | N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount PG-TSDSON-8 |
| Corrente - Drain continuo (Id) @ 25 ° C: | 11.3A (Tc) |
| Email: | [email protected] |
