Nomor Bagian Internal | RO-TPN1110ENH,L1Q |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 4V @ 200µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | 8-TSON Advance (3.3x3.3) |
Seri: | U-MOSVIII-H |
Rds Pada (Max) @ Id, Vgs: | 114 mOhm @ 3.6A, 10V |
Power Disipasi (Max): | 700mW (Ta), 39W (Tc) |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | 8-PowerVDFN |
Nama lain: | TPN1110ENH,L1Q(M TPN1110ENHL1QTR |
Suhu Operasional: | 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 600pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 200V |
Detil Deskripsi: | N-Channel 200V 7.2A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
Current - Continuous Drain (Id) @ 25 ° C: | 7.2A (Ta) |
Email: | [email protected] |