TPCC8002-H(TE12L,Q
TPCC8002-H(TE12L,Q
Nomor bagian:
TPCC8002-H(TE12L,Q
Pabrikan:
Toshiba Semiconductor and Storage
Deskripsi:
MOSFET N-CH 30V 22A 8TSON
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
58231 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
1.TPCC8002-H(TE12L,Q.pdf2.TPCC8002-H(TE12L,Q.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-TPCC8002-H(TE12L,Q
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Tegangan - Uji:2500pF @ 10V
Tegangan - Breakdown:8-TSON
Vgs (th) (Max) @ Id:8.3 mOhm @ 11A, 10V
Vgs (Max):4.5V, 10V
Teknologi:MOSFET (Metal Oxide)
Seri:U-MOSV-H
Status RoHS:Tape & Reel (TR)
Rds Pada (Max) @ Id, Vgs:22A (Ta)
Polarisasi:8-VDFN Exposed Pad
Nama lain:TPCC8002HTE12LQ
Suhu Operasional:150°C (TJ)
mount Jenis:Surface Mount
Tingkat Sensitivitas Kelembaban (MSL):1 (Unlimited)
Nomor Bagian Produsen:TPCC8002-H(TE12L,Q
Kapasitansi Masukan (Ciss) (Max) @ VDS:27nC @ 10V
IGBT Jenis:±20V
Gate Charge (Qg) (Max) @ Vgs:2.5V @ 1mA
Fitur FET:N-Channel
Deskripsi yang Diperluas:N-Channel 30V 22A (Ta) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON
Tiriskan untuk Sumber Tegangan (Vdss):-
Deskripsi:MOSFET N-CH 30V 22A 8TSON
Current - Continuous Drain (Id) @ 25 ° C:30V
kapasitansi Ratio:700mW (Ta), 30W (Tc)
Email:[email protected]

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