TK100E06N1,S1X
- Nomor bagian:
- TK100E06N1,S1X
- Pabrikan:
- Toshiba Semiconductor and Storage
- Deskripsi:
- MOSFET N CH 60V 100A TO-220
- Status RoHS:
- Memimpin bebas / RoHS Compliant
- Jumlah dalam Stok:
- 61245 Pieces
- Waktu pengiriman:
- 1-2 days (We have stocks to ship now)
- Waktu produksi:
- 4-8 weeks
- Lembaran data:
- TK100E06N1,S1X.pdf
pengantar
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Spesifikasi
| Nomor Bagian Internal | RO-TK100E06N1,S1X |
|---|---|
| Kondisi | Original New |
| Negara Asal | Contact us |
| Penandaan Top | email us |
| Penggantian | See datasheet |
| Vgs (th) (Max) @ Id: | 4V @ 1mA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | TO-220 |
| Seri: | U-MOSVIII-H |
| Rds Pada (Max) @ Id, Vgs: | 2.3 mOhm @ 50A, 10V |
| Power Disipasi (Max): | 255W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | TO-220-3 |
| Nama lain: | TK100E06N1,S1X(S TK100E06N1S1X |
| Suhu Operasional: | 150°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 10500pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 60V |
| Detil Deskripsi: | N-Channel 60V 100A (Ta) 255W (Tc) Through Hole TO-220 |
| Current - Continuous Drain (Id) @ 25 ° C: | 100A (Ta) |
| Email: | [email protected] |
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