SUD35N10-26P-T4GE3
SUD35N10-26P-T4GE3
Nomor bagian:
SUD35N10-26P-T4GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 100V 35A TO252
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
40966 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
SUD35N10-26P-T4GE3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-SUD35N10-26P-T4GE3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:4.4V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-252, (D-Pak)
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:26 mOhm @ 12A, 10V
Power Disipasi (Max):8.3W (Ta), 83W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:33 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:2000pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:47nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):7V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):100V
Detil Deskripsi:N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25 ° C:35A (Tc)
Email:[email protected]

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