Nomor Bagian Internal | RO-STH315N10F7-2 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 4.5V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | H2Pak-2 |
Seri: | DeepGATE™, STripFET™ VII |
Rds Pada (Max) @ Id, Vgs: | 2.3 mOhm @ 60A, 10V |
Power Disipasi (Max): | 315W (Tc) |
Pengemasan: | Cut Tape (CT) |
Paket / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Nama lain: | 497-14718 497-14718-1 |
Suhu Operasional: | -55°C ~ 175°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 38 Weeks |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 12800pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 100V |
Detil Deskripsi: | N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2 |
Current - Continuous Drain (Id) @ 25 ° C: | 180A (Tc) |
Email: | [email protected] |