STB18N60DM2
STB18N60DM2
Nomor bagian:
STB18N60DM2
Pabrikan:
STMicroelectronics
Deskripsi:
MOSFET N-CH 600V 12A
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
74660 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
STB18N60DM2.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-STB18N60DM2
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±25V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:D2PAK
Seri:MDmesh™ DM2
Rds Pada (Max) @ Id, Vgs:295 mOhm @ 6A, 10V
Power Disipasi (Max):90W (Tc)
Pengemasan:Cut Tape (CT)
Paket / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nama lain:497-16339-1
Suhu Operasional:150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):600V
Detil Deskripsi:N-Channel 600V 12A (Tc) 90W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

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