SPB18P06PGATMA1
- Nomor bagian:
- SPB18P06PGATMA1
- Deskripsi:
- MOSFET P-CH 60V 18.7A TO-263
- Status RoHS:
- Memimpin bebas / RoHS Compliant
- Jumlah dalam Stok:
- 79067 Pieces
- Waktu pengiriman:
- 1-2 days (We have stocks to ship now)
- Waktu produksi:
- 4-8 weeks
- Lembaran data:
- SPB18P06PGATMA1.pdf
pengantar
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Spesifikasi
| Nomor Bagian Internal | RO-SPB18P06PGATMA1 |
|---|---|
| Kondisi | Original New |
| Negara Asal | Contact us |
| Penandaan Top | email us |
| Penggantian | See datasheet |
| Vgs (th) (Max) @ Id: | 4V @ 1mA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | D²PAK (TO-263AB) |
| Seri: | SIPMOS® |
| Rds Pada (Max) @ Id, Vgs: | 130 mOhm @ 13.2A, 10V |
| Power Disipasi (Max): | 81.1W (Ta) |
| Pengemasan: | Cut Tape (CT) |
| Paket / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Nama lain: | SPB18P06PGATMA1CT SPB18P06PGINCT SPB18P06PGINCT-ND |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 860pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| FET Jenis: | P-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 60V |
| Detil Deskripsi: | P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount D²PAK (TO-263AB) |
| Current - Continuous Drain (Id) @ 25 ° C: | 18.7A (Ta) |
| Email: | [email protected] |
