Nomor Bagian Internal | RO-SI5511DC-T1-GE3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 2V @ 250µA |
Paket Perangkat pemasok: | 1206-8 ChipFET™ |
Seri: | TrenchFET® |
Rds Pada (Max) @ Id, Vgs: | 55 mOhm @ 4.8A, 4.5V |
Listrik - Max: | 3.1W, 2.6W |
Pengemasan: | Tape & Reel (TR) |
Paket / Case: | 8-SMD, Flat Lead |
Nama lain: | SI5511DC-T1-GE3TR |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 435pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 7.1nC @ 5V |
FET Jenis: | N and P-Channel |
Fitur FET: | Logic Level Gate |
Tiriskan untuk Sumber Tegangan (Vdss): | 30V |
Detil Deskripsi: | Mosfet Array N and P-Channel 30V 4A, 3.6A 3.1W, 2.6W Surface Mount 1206-8 ChipFET™ |
Current - Continuous Drain (Id) @ 25 ° C: | 4A, 3.6A |
Nomor Bagian Dasar: | SI5511 |
Email: | [email protected] |