Nomor Bagian Internal | RO-SI4288DY-T1-GE3 |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Tegangan - Uji: | 580pF @ 20V |
Tegangan - Breakdown: | 8-SO |
Vgs (th) (Max) @ Id: | 20 mOhm @ 10A, 10V |
Seri: | TrenchFET® |
Status RoHS: | Tape & Reel (TR) |
Rds Pada (Max) @ Id, Vgs: | 9.2A |
Listrik - Max: | 3.1W |
Polarisasi: | 8-SOIC (0.154", 3.90mm Width) |
Nama lain: | SI4288DY-T1-GE3TR |
Suhu Operasional: | -55°C ~ 150°C (TJ) |
mount Jenis: | Surface Mount |
Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
Manufacturer Standard Lead Time: | 24 Weeks |
Nomor Bagian Produsen: | SI4288DY-T1-GE3 |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 15nC @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
Fitur FET: | 2 N-Channel (Dual) |
Deskripsi yang Diperluas: | Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SO |
Tiriskan untuk Sumber Tegangan (Vdss): | Logic Level Gate |
Deskripsi: | MOSFET 2N-CH 40V 9.2A 8SO |
Current - Continuous Drain (Id) @ 25 ° C: | 40V |
Email: | [email protected] |