NTD3817N-1G
NTD3817N-1G
Nomor bagian:
NTD3817N-1G
Pabrikan:
ON Semiconductor
Deskripsi:
MOSFET N-CH 16V 7.6A IPAK
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
33278 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
NTD3817N-1G.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-NTD3817N-1G
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±16V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:I-PAK
Seri:-
Rds Pada (Max) @ Id, Vgs:13.9 mOhm @ 15A, 10V
Power Disipasi (Max):1.2W (Ta), 25.9W (Tc)
Pengemasan:Tube
Paket / Case:TO-251-3 Short Leads, IPak, TO-251AA
Suhu Operasional:-55°C ~ 175°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:702pF @ 12V
Gate Charge (Qg) (Max) @ Vgs:10.5nC @ 4.5V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):4.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):16V
Detil Deskripsi:N-Channel 16V 7.6A (Ta), 34.5A (Tc) 1.2W (Ta), 25.9W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25 ° C:7.6A (Ta), 34.5A (Tc)
Email:[email protected]

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