NAND512R3A2BZA6E
NAND512R3A2BZA6E
Nomor bagian:
NAND512R3A2BZA6E
Pabrikan:
STMicroelectronics
Deskripsi:
IC FLASH 512M PARALLEL 63VFBGA
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
55113 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
NAND512R3A2BZA6E.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-NAND512R3A2BZA6E
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Tulis Siklus Waktu - Kata, Halaman:60ns
Tegangan - Pasokan:1.7 V ~ 1.95 V
Teknologi:FLASH - NAND
Paket Perangkat pemasok:63-VFBGA (8.5x15)
Seri:-
Pengemasan:Tray
Paket / Case:63-VFBGA
Suhu Operasional:-40°C ~ 85°C (TA)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):3 (168 Hours)
memory Type:Non-Volatile
Ukuran memori:512Mb (64M x 8)
Antarmuka Memori:Parallel
Format Memori:FLASH
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Detil Deskripsi:FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 60ns 63-VFBGA (8.5x15)
Nomor Bagian Dasar:NAND512
Waktu akses:60ns
Email:[email protected]

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