Nomor Bagian Internal | RO-IRF3706LPBF |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 2V @ 250µA |
Vgs (Max): | ±12V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | TO-262 |
Seri: | HEXFET® |
Rds Pada (Max) @ Id, Vgs: | 8.5 mOhm @ 15A, 10V |
Power Disipasi (Max): | 88W (Tc) |
Pengemasan: | Tube |
Paket / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Nama lain: | *IRF3706LPBF |
Suhu Operasional: | -55°C ~ 175°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 2410pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 2.8V, 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 20V |
Detil Deskripsi: | N-Channel 20V 77A (Tc) 88W (Tc) Through Hole TO-262 |
Current - Continuous Drain (Id) @ 25 ° C: | 77A (Tc) |
Email: | [email protected] |