Nomor Bagian Internal | RO-IRF1404L |
---|---|
Kondisi | Original New |
Negara Asal | Contact us |
Penandaan Top | email us |
Penggantian | See datasheet |
Vgs (th) (Max) @ Id: | 4V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Paket Perangkat pemasok: | TO-262 |
Seri: | HEXFET® |
Rds Pada (Max) @ Id, Vgs: | 4 mOhm @ 95A, 10V |
Power Disipasi (Max): | 3.8W (Ta), 200W (Tc) |
Pengemasan: | Tube |
Paket / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Nama lain: | *IRF1404L |
Suhu Operasional: | -55°C ~ 175°C (TJ) |
mount Jenis: | Through Hole |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Status Gratis Memimpin / Status RoHS: | Contains lead / RoHS non-compliant |
Kapasitansi Masukan (Ciss) (Max) @ VDS: | 7360pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
FET Jenis: | N-Channel |
Fitur FET: | - |
Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
Tiriskan untuk Sumber Tegangan (Vdss): | 40V |
Detil Deskripsi: | N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262 |
Current - Continuous Drain (Id) @ 25 ° C: | 162A (Tc) |
Email: | [email protected] |