IPI037N08N3GHKSA1
- Nomor bagian:
- IPI037N08N3GHKSA1
- Deskripsi:
- MOSFET N-CH 80V 100A TO262-3
- Status RoHS:
- Memimpin bebas / RoHS Compliant
- Jumlah dalam Stok:
- 45660 Pieces
- Waktu pengiriman:
- 1-2 days (We have stocks to ship now)
- Waktu produksi:
- 4-8 weeks
- Lembaran data:
- IPI037N08N3GHKSA1.pdf
pengantar
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Spesifikasi
| Nomor Bagian Internal | RO-IPI037N08N3GHKSA1 |
|---|---|
| Kondisi | Original New |
| Negara Asal | Contact us |
| Penandaan Top | email us |
| Penggantian | See datasheet |
| Vgs (th) (Max) @ Id: | 3.5V @ 155µA |
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | PG-TO262-3 |
| Seri: | OptiMOS™ |
| Rds Pada (Max) @ Id, Vgs: | 3.75 mOhm @ 100A, 10V |
| Power Disipasi (Max): | 214W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Nama lain: | IPI037N08N3 G IPI037N08N3 G-ND SP000454278 |
| Suhu Operasional: | -55°C ~ 175°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 8110pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs: | 117nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 6V, 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 80V |
| Detil Deskripsi: | N-Channel 80V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3 |
| Current - Continuous Drain (Id) @ 25 ° C: | 100A (Tc) |
| Email: | [email protected] |
