FQI3N25TU
- Nomor bagian:
- FQI3N25TU
- Pabrikan:
- ON Semiconductor
- Deskripsi:
- MOSFET N-CH 250V 2.8A I2PAK
- Status RoHS:
- Memimpin bebas / RoHS Compliant
- Jumlah dalam Stok:
- 65108 Pieces
- Waktu pengiriman:
- 1-2 days (We have stocks to ship now)
- Waktu produksi:
- 4-8 weeks
- Lembaran data:
- FQI3N25TU.pdf
pengantar
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Spesifikasi
| Nomor Bagian Internal | RO-FQI3N25TU |
|---|---|
| Kondisi | Original New |
| Negara Asal | Contact us |
| Penandaan Top | email us |
| Penggantian | See datasheet |
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | I2PAK (TO-262) |
| Seri: | QFET® |
| Rds Pada (Max) @ Id, Vgs: | 2.2 Ohm @ 1.4A, 10V |
| Power Disipasi (Max): | 3.13W (Ta), 45W (Tc) |
| Pengemasan: | Tube |
| Paket / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 170pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 250V |
| Detil Deskripsi: | N-Channel 250V 2.8A (Tc) 3.13W (Ta), 45W (Tc) Through Hole I2PAK (TO-262) |
| Current - Continuous Drain (Id) @ 25 ° C: | 2.8A (Tc) |
| Email: | [email protected] |
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