DMG4N60SJ3
Nomor bagian:
DMG4N60SJ3
Pabrikan:
Diodes Incorporated
Deskripsi:
MOSFET NCH 600V 3A TO251
Status RoHS:
Berisi timbal / RoHS Compliant
Jumlah dalam Stok:
86646 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
DMG4N60SJ3.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-DMG4N60SJ3
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:4.5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-251
Seri:-
Rds Pada (Max) @ Id, Vgs:2.5 Ohm @ 2A, 10V
Power Disipasi (Max):41W (Tc)
Pengemasan:Tube
Paket / Case:TO-251-3 Short Leads, IPak, TO-251AA
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:30 Weeks
Status Gratis Memimpin / Status RoHS:Contains lead / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:532pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:14.3nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):600V
Detil Deskripsi:N-Channel 600V 3A (Tc) 41W (Tc) Through Hole TO-251
Current - Continuous Drain (Id) @ 25 ° C:3A (Tc)
Email:[email protected]

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