AOW11S65
AOW11S65
Nomor bagian:
AOW11S65
Pabrikan:
Alpha and Omega Semiconductor, Inc.
Deskripsi:
MOSFET N-CH 650V 11A TO262
Status RoHS:
Memimpin bebas / RoHS Compliant
Jumlah dalam Stok:
49308 Pieces
Waktu pengiriman:
1-2 days (We have stocks to ship now)
Waktu produksi:
4-8 weeks
Lembaran data:
1.AOW11S65.pdf2.AOW11S65.pdf

pengantar

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Spesifikasi

Nomor Bagian Internal RO-AOW11S65
Kondisi Original New
Negara Asal Contact us
Penandaan Top email us
Penggantian See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:TO-262
Seri:aMOS™
Rds Pada (Max) @ Id, Vgs:399 mOhm @ 5.5A, 10V
Power Disipasi (Max):198W (Tc)
Pengemasan:Tube
Paket / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Nama lain:785-1524-5
AOW11S65-ND
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:646pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:13.2nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):10V
Tiriskan untuk Sumber Tegangan (Vdss):650V
Detil Deskripsi:N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-262
Current - Continuous Drain (Id) @ 25 ° C:11A (Tc)
Email:[email protected]

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