RN2902,LF(CT
RN2902,LF(CT
Modèle de produit:
RN2902,LF(CT
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS 2PNP PREBIAS 0.2W US6
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
56869 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
RN2902,LF(CT.pdf

introduction

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Spécifications

Numéro de pièce interne RO-RN2902,LF(CT
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Collecteur-émetteur disruptif (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor Type:2 PNP - Pre-Biased (Dual)
Package composant fournisseur:US6
Séries:-
Résistance - Base de l'émetteur (R2):10 kOhms
Résistance - Base (R1):10 kOhms
Puissance - Max:200mW
Emballage:Cut Tape (CT)
Package / Boîte:6-TSSOP, SC-88, SOT-363
Autres noms:RN2902LF(CTCT
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:12 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Fréquence - Transition:200MHz
Description détaillée:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Gain en courant DC (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Courant - Collecteur Cutoff (Max):500nA
Courant - Collecteur (Ic) (max):100mA
Email:[email protected]

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