IXTH32P20T
IXTH32P20T
Modèle de produit:
IXTH32P20T
Fabricant:
IXYS Corporation
La description:
MOSFET P-CH 200V 32A TO-247
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
53797 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
IXTH32P20T.pdf

introduction

We can supply IXTH32P20T, use the request quote form to request IXTH32P20T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTH32P20T.The price and lead time for IXTH32P20T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTH32P20T.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-IXTH32P20T
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±15V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-247 (IXTH)
Séries:TrenchP™
Rds On (Max) @ Id, Vgs:130 mOhm @ 16A, 10V
Dissipation de puissance (max):300W (Tc)
Emballage:Tube
Package / Boîte:TO-247-3
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:24 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:14500pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:185nC @ 10V
type de FET:P-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):200V
Description détaillée:P-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Courant - Drainage continu (Id) à 25 ° C:32A (Tc)
Email:[email protected]

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