IXTA86N20T
IXTA86N20T
Modèle de produit:
IXTA86N20T
Fabricant:
IXYS Corporation
La description:
MOSFET N-CH 200V 86A TO-263
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
71461 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
IXTA86N20T.pdf

introduction

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Spécifications

Numéro de pièce interne RO-IXTA86N20T
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Vgs (th) (Max) @ Id:5V @ 1mA
Vgs (Max):±30V
La technologie:MOSFET (Metal Oxide)
Package composant fournisseur:TO-263 (IXTA)
Séries:-
Rds On (Max) @ Id, Vgs:29 mOhm @ 500mA, 10V
Dissipation de puissance (max):480W (Tc)
Emballage:Tube
Package / Boîte:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Température de fonctionnement:-55°C ~ 175°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:24 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:4500pF @ 25V
Charge de la porte (Qg) (Max) @ Vgs:90nC @ 10V
type de FET:N-Channel
Fonction FET:-
Tension d'entraînement (Max Rds activé, Min Rds activé):10V
Tension drain-source (Vdss):200V
Description détaillée:N-Channel 200V 86A (Tc) 480W (Tc) Surface Mount TO-263 (IXTA)
Courant - Drainage continu (Id) à 25 ° C:86A (Tc)
Email:[email protected]

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