IRF6610TR1
- Modèle de produit:
- IRF6610TR1
- La description:
- MOSFET N-CH 20V 15A DIRECTFET
- Statut RoHS:
- Contient du plomb / Non conforme à RoHS
- la quantité en dépôt:
- 78979 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- IRF6610TR1.pdf
introduction
We can supply IRF6610TR1, use the request quote form to request IRF6610TR1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF6610TR1.The price and lead time for IRF6610TR1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRF6610TR1.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-IRF6610TR1 |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Vgs (th) (Max) @ Id: | 2.55V @ 250µA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | DIRECTFET™ SQ |
| Séries: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 15A, 10V |
| Dissipation de puissance (max): | 2.2W (Ta), 42W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Package / Boîte: | DirectFET™ Isometric SQ |
| Autres noms: | IRF6610 IRF6610-ND IRF6610TR1-ND IRF6610TR1TR SP001526776 |
| Température de fonctionnement: | -40°C ~ 150°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 3 (168 Hours) |
| Statut sans plomb / Statut RoHS: | Contains lead / RoHS non-compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 1520pF @ 10V |
| Charge de la porte (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 4.5V, 10V |
| Tension drain-source (Vdss): | 20V |
| Description détaillée: | N-Channel 20V 15A (Ta), 66A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ |
| Courant - Drainage continu (Id) à 25 ° C: | 15A (Ta), 66A (Tc) |
| Email: | [email protected] |
