IPB083N10N3GATMA1
- Modèle de produit:
- IPB083N10N3GATMA1
- La description:
- MOSFET N-CH 100V 80A TO263-3
- Statut RoHS:
- Sans plomb / conforme à la directive RoHS
- la quantité en dépôt:
- 47289 Pieces
- Heure de livraison:
- 1-2 days (We have stocks to ship now)
- Temps de production:
- 4-8 weeks
- Fiche technique:
- IPB083N10N3GATMA1.pdf
introduction
We can supply IPB083N10N3GATMA1, use the request quote form to request IPB083N10N3GATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB083N10N3GATMA1.The price and lead time for IPB083N10N3GATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPB083N10N3GATMA1.We look forward to working with you to establish long-term relations of cooperation
Spécifications
| Numéro de pièce interne | RO-IPB083N10N3GATMA1 |
|---|---|
| État | Original New |
| Pays d'origine | Contact us |
| Top Marking | email us |
| Remplacement | See datasheet |
| Vgs (th) (Max) @ Id: | 3.5V @ 75µA |
| Vgs (Max): | ±20V |
| La technologie: | MOSFET (Metal Oxide) |
| Package composant fournisseur: | D²PAK (TO-263AB) |
| Séries: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.3 mOhm @ 73A, 10V |
| Dissipation de puissance (max): | 125W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Package / Boîte: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Autres noms: | IPB083N10N3 G IPB083N10N3 G-ND IPB083N10N3 GTR-ND IPB083N10N3G IPB083N10N3GATMA1TR SP000458812 |
| Température de fonctionnement: | -55°C ~ 175°C (TJ) |
| Type de montage: | Surface Mount |
| Niveau de sensibilité à l'humidité (MSL): | 1 (Unlimited) |
| Statut sans plomb / Statut RoHS: | Lead free / RoHS Compliant |
| Capacité d'entrée (Ciss) (Max) @ Vds: | 3980pF @ 50V |
| Charge de la porte (Qg) (Max) @ Vgs: | 55nC @ 10V |
| type de FET: | N-Channel |
| Fonction FET: | - |
| Tension d'entraînement (Max Rds activé, Min Rds activé): | 6V, 10V |
| Tension drain-source (Vdss): | 100V |
| Description détaillée: | N-Channel 100V 80A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263AB) |
| Courant - Drainage continu (Id) à 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
