DLE30C-KC9
DLE30C-KC9
Modèle de produit:
DLE30C-KC9
Fabricant:
ON Semiconductor
La description:
DIODE GEN PURP 200V 3A AXIAL
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
31404 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
DLE30C-KC9.pdf

introduction

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Spécifications

Numéro de pièce interne RO-DLE30C-KC9
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Inverse de crête (max):Standard
Tension - directe (Vf) (max) @ Si:3A
Tension - Ventilation:Axial
Séries:-
État RoHS:Bulk
Temps de recouvrement inverse (trr):Fast Recovery = 200mA (Io)
Résistance @ Si, F:-
Polarisation:DO-201AD, Axial
Température d'utilisation - Jonction:35ns
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Référence fabricant:DLE30C-KC9
Description élargie:Diode Standard 200V 3A Through Hole Axial
Configuration diode:10µA @ 400V
La description:DIODE GEN PURP 200V 3A AXIAL
Courant - fuite, inverse à Vr:980mV @ 3A
Courant - Moyen redressé (Io) (par diode):200V
Capacité à Vr, F:150°C (Max)
Email:[email protected]

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